Optimizing disk registration algorithms for nanobeam electron diffraction strain mapping

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Misorientation Mapping for Visualization of Plastic Strain via Electron Back-scattered Diffraction

The ability to map elastic or plastic strain on a microstructural level is critical to understanding and controlling deformation in structural alloys and ceramics. Electron back-scattered diffraction (EBSD) and related techniques, such as electron channeling patterns, have been used with some success to measure the plastic strain around cracks in Fe-3Si single crystals [1], Cu single crystals [...

متن کامل

Electron Diffraction Electron Diffraction

This guide sheet outlines a method for the analysis of cubic crystal forms, this being useful to you for interpreting the transmission diffraction pattern produced by scattering electrons off a thin film target of polycrystalline aluminium. The apparatus also contains samples with hexagonal structures. These are pyrolytic graphite targets, and are available both as single crystals and in polycr...

متن کامل

Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD)

Strain engineering technology is now routinely integrated in the wafer fabrication process to increase the carrier mobility and improve the device performance. Measuring and controlling the strain in nanoscaled materials is a critical for developing the state-of-art semiconductor devices [1-2]. High-performance strain-engineered ETSOI devices have been reported, such as strained SOI (SSDOI) for...

متن کامل

Assessing strain mapping by electron backscatter diffraction and confocal Raman microscopy using wedge-indented Si.

The accuracy of electron backscatter diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is modeled using finite element analysis (FEA) that is adapted to the near-indentation surface profile measured by atomic force microscopy (AFM). The as...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Ultramicroscopy

سال: 2017

ISSN: 0304-3991

DOI: 10.1016/j.ultramic.2016.12.021